MBR20200PT

Diode Arrays Overview

The MBR20200PT is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a dual common cathode configuration housed in a TO-247AD-3 package for through-hole mounting. The device supports an average forward current of 20 A and a repetitive peak reverse voltage of 200 V. Key electrical parameters include a maximum forward voltage of 1.1 V, a non-repetitive peak forward surge current of 150 A, and a maximum reverse current of 100 µA. It operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes silicon Schottky technology to achieve low power loss and high efficiency during operation.
• Employs a dual common cathode configuration to facilitate efficient circuit design in bridge or center-tapped applications.
• Features a plastic encapsulated structure designed for robust thermal performance and reliable long-term operation.

Diode Arrays Applications

• High-frequency switching mode power supplies (SMPS)
• Free-wheeling diodes in DC-DC converters
• Reverse polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components. Confirm that the TO-247AD-3 package dimensions match the target PCB footprint requirements before finalizing orders.

Diode Arrays Selection Notes

Select this component when a dual common cathode topology is required for 200 V applications. The TO-247AD-3 package offers superior heat dissipation compared to smaller packages, supporting continuous 20 A currents. Compare the 1.1 V forward voltage drop against alternative devices to optimize system efficiency. Ensure the operating environment stays within the specified -55 °C to +150 °C temperature range for reliable performance.

Diode Arrays Part Context

This device belongs to the MBRxxPT series of Schottky rectifiers from Taiwan Semiconductor. The series is characterized by silicon epitaxial planar construction and P+ ring technology for enhanced ruggedness. These rectifiers are engineered for high-speed switching applications where low forward voltage and minimal reverse recovery charge are critical for maintaining system efficiency.

Diode Arrays Replacement Considerations

The MBR20200CT serves as a functional substitute within the same product family, offering identical electrical ratings but utilizing a TO-220AB package. Verify mechanical fit and thermal management capabilities when substituting between these package types.

Diode Arrays FAQ

What is the maximum junction temperature for the MBR20200PT?

The maximum operating junction temperature is +150 °C.

Does the MBR20200PT have internal snubber diodes?

No, the MBR20200PT consists of two independent Schottky barrier diodes in a common cathode configuration without integrated snubber elements.

What is the recommended mounting style for this component?

The component is designed for through-hole mounting using the TO-247AD-3 package.