Diode Arrays MBR20H50CT-E3/45 product image

MBR20H50CT-E3/45

  • Description:DIODE ARR SCHOTT 50V 10A TO220AB
  • Series:-

SKU:b50af6216da9 Category: Brand:

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MBR20H50CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 50V 10A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20H50CT-E3/45

  • Description:DIODE ARR SCHOTT 50V 10A TO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:710 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR20H50CT-E3/45

MBR20H50CT-E3/45

Diode Arrays Overview

The MBR20H50CT-E3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology to deliver improved performance at elevated temperatures. The device features a TO-220AB package with matte tin-plated leads and an epoxy casing rated UL 94V-0. Key electrical specifications include a maximum repetitive peak reverse voltage of 50 V, a total average forward rectified current of 20 A (10 A per diode), and a non-repetitive peak forward surge current of 150 A. Maximum junction temperature reaches 175 °C.

Diode Arrays Feature Summary

  • Guardring structure provides overvoltage protection
  • High barrier technology ensures low leakage current and high efficiency
  • Low forward voltage drop reduces power losses
  • Suitable for high frequency operation

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes
  • DC-to-DC converters
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official documentation before procurement. Confirm that the component meets specific environmental standards such as RoHS compliance and JESD 201 whisker testing requirements. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component when designing circuits requiring robust high-temperature performance and low forward voltage characteristics. Consider the TO-220AB package dimensions and mounting torque limits during mechanical design. Evaluate the thermal resistance parameters to ensure adequate heat dissipation under continuous operating conditions.

Diode Arrays Part Context

This part belongs to the MBR(F,B)20HxxCT series from Vishay General Semiconductor. The series encompasses various voltage ratings ranging from 35 V to 60 V. All variants share identical physical packaging and core structural features while differing in their maximum repetitive peak reverse voltage capabilities.

Diode Arrays Replacement Considerations

MBR20H45CT-E3/45

Diode Arrays FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature is 175 °C.

How is the polarity marked on the device?

The polarity is indicated as marked on the component body.

What does the E3 suffix indicate regarding material composition?

The E3 suffix denotes consumer grade components that meet JESD 201 class 1A whisker test requirements.

MBR20H50CT-E3/45MBR20H50CT-E3/45

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