Diode Arrays MBR2550CT product image

MBR2550CT

$0.62
  • Description:DIODE ARR SCHOTT 50V 25A TO220AB
  • Series:-

SKU:c0ccf32a462a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBR2550CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 50V 25A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2550CT

  • Description:DIODE ARR SCHOTT 50V 25A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):25A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 25 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 µA @ 50 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2550CT

MBR2550CT

Diode Arrays Overview

The MBR2550CT is a dual common-cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a TO-220AB package with a maximum average forward current (IF) of 25 A and a repetitive peak reverse voltage (VRRM) of 50 V. The device supports a surge peak forward current (IFSM) of 200 A and operates within a junction temperature range of -55°C to +150°C. Electrical specifications include a maximum forward voltage of 0.75 V at 12.5 A and 25°C, and a maximum reverse current of 200 µA at rated voltage and 25°C.

Diode Arrays Feature Summary

  • Guard ring structure provides protection against overvoltage stress
  • Utilizes metal-to-silicon junction for majority carrier conduction
  • Matte tin plated leads ensure solderability per J-STD-002 standards

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • DC to DC converters
  • Adapters

Diode Arrays Procurement Notes

Verify the specific ordering code suffix when sourcing components. The standard 'MBR2550CT' designation indicates non-automotive qualification, while the 'H' suffix denotes AEC-Q101 qualification. Confirm compliance requirements such as RoHS and halogen-free status against IEC 61249-2-21 prior to procurement to ensure alignment with project specifications.

Diode Arrays Selection Notes

Select this component for low voltage, high frequency applications requiring high efficiency and low power loss. Ensure the circuit design accommodates the 50 V reverse voltage rating and 25 A continuous current capability. Consider thermal management strategies given the 1 °C/W junction-to-case thermal resistance typical value to maintain operation within the specified temperature limits.

Diode Arrays Part Context

This part belongs to the MBR2535CT through MBR25150CT series from Taiwan Semiconductor. The series shares identical physical dimensions, pin configurations, and general electrical characteristics, differing primarily in their breakdown voltage ratings. The MBR2550CT specifically addresses designs requiring a 50 V blocking capability within this standardized 25 A platform.

Diode Arrays Replacement Considerations

Cross-reference with other manufacturers offering 25 A, 50 V dual common-cathode Schottky rectifiers in the TO-220AB package. Verify that substitute parts meet or exceed the 200 A surge current rating and 150°C maximum junction temperature specifications.

MBR2550CTMBR2550CT
$0.62
Buy Now

Recent News