Diode Arrays MBR2X100A120 product image

MBR2X100A120

$35.62
  • Description:DIODE MOD SCHOT 120V 100A SOT227
  • Series:-

SKU:485b78efd3df Category: Brand:

  
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MBR2X100A120 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 120V 100A SOT227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X100A120

  • Description:DIODE MOD SCHOT 120V 100A SOT227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 120 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X100A120

MBR2X100A120

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X100A120 is a silicon Schottky rectifier module featuring two independent legs within an SOT-227 isolation package. It provides a maximum repetitive peak reverse voltage of 120 V and supports an average forward current of 200 A per package. The device exhibits a peak forward surge current capability of 1400 A per leg and maintains an operating junction temperature range from -40 °C to +150 °C. Electrical characteristics include a maximum instantaneous reverse current of 3 mA at rated DC blocking voltage and a maximum thermal resistance of 0.40 °C/W per leg.

Diode Arrays Feature Summary

  • Features an electrically isolated base plate for enhanced safety in high-voltage applications
  • Provides high surge current capability with a peak rating of 1400 A per leg
  • Constructed as an ESD insensitive component for robust handling

Diode Arrays Applications

  • High-efficiency power conversion systems requiring low forward voltage drop
  • Industrial motor drives utilizing screw-mount isolation packages
  • DC-DC converters demanding high thermal performance and ruggedness

Diode Arrays Procurement Notes

Verify the specific manufacturer source, as GeneSiC Semiconductor has been acquired by Navitas Semiconductor. Confirm that the ordering suffix corresponds exactly to the 120 V rating and 200 A current specification. Ensure compliance with RoHS directives and check for any recent product change notifications or discontinuation notices prior to finalizing procurement orders.

Diode Arrays Selection Notes

Select this module when a 120 V blocking voltage and 200 A average current are required in a compact SOT-227 form factor. The low forward voltage minimizes conduction losses, while the high surge rating accommodates transient loads. Verify that the system design can accommodate the specified thermal resistance and that the isolation voltage meets the circuit requirements.

Diode Arrays Part Context

This component belongs to the MBR2X100 series of silicon Schottky diode modules designed for high-power applications. The series utilizes an isolation type package to provide electrical separation between the terminals and the mounting surface. These modules are engineered for reliability in demanding environments, offering superior switching characteristics compared to standard p-n junction rectifiers.

Diode Arrays Replacement Considerations

Direct replacements must match the 120 V reverse voltage, 200 A current rating, and SOT-227 package dimensions. Verify that substitute components maintain equivalent thermal resistance and isolation voltage specifications to ensure system compatibility.

MBR2X100A120MBR2X100A120
$35.62
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