Diode Arrays MBR2X120A180 product image

MBR2X120A180

$36.75
  • Description:DIODE MOD SCHOT 180V 120A SOT227
  • Series:-

SKU:a03a8fa55c81 Category: Brand:

  
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MBR2X120A180 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 180V 120A SOT227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X120A180

  • Description:DIODE MOD SCHOT 180V 120A SOT227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):180 V
  • Current - Average Rectified (Io) (per Diode):120A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 120 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 180 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X120A180

MBR2X120A180

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X120A180 is a silicon Schottky rectifier module featuring an electrically isolated SOT-227 package. It provides a maximum repetitive peak reverse voltage of 180 V and supports an average forward current of 240 A per package. The device exhibits a peak forward surge current capability of 1500 A per leg. Electrical characteristics include a maximum instantaneous reverse current of 3 mA at rated DC blocking voltage and a maximum thermal resistance junction-to-case of 0.38 °C/W per leg. Operating temperatures range from -40 to 150 °C, with an isolation voltage of 2500 V.

Diode Arrays Feature Summary

  • Features an electrically isolated base plate within the SOT-227 package structure
  • Provides high surge current capability for transient load handling
  • Designed as a non-ESD sensitive component for robust assembly

Diode Arrays Applications

  • High-frequency power conversion circuits requiring low forward voltage drop
  • Free-wheeling rectification in DC-DC converter topologies
  • Industrial power supply modules operating under high thermal stress

Diode Arrays Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm electrical ratings and package dimensions. Ensure that sourcing channels provide valid traceability for this discrete semiconductor component. Confirm compliance with relevant environmental standards prior to integration into final assemblies.

Diode Arrays Selection Notes

Select this module when applications demand high average current handling alongside low forward voltage characteristics. The isolated base plate facilitates direct heatsinking without additional insulators. Consider the thermal resistance and operating temperature range to ensure adequate heat dissipation in the target enclosure design.

Diode Arrays Part Context

This component belongs to the MBR2X120 series of Schottky diode modules manufactured by GeneSiC Semiconductor. The series utilizes silicon technology to deliver high-efficiency rectification in power electronics. The MBR2X120A180 variant specifically targets applications requiring 180 V blocking capability within the standard SOT-227 form factor.

Diode Arrays Replacement Considerations

Cross-reference with other SOT-227 Schottky modules offering comparable 240 A current ratings and 180 V reverse voltage specifications. Verify pinout compatibility and thermal interface requirements before substituting.

MBR2X120A180MBR2X120A180
$36.75
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