Diode Arrays MBR3035PTH product image

MBR3035PTH

$0.89
  • Description:DIODE ARR SCHOTT 35V 30A TO247AD
  • Series:-

SKU:805b56cc4640 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBR3035PTH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOTT 35V 30A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR3035PTH

  • Description:DIODE ARR SCHOTT 35V 30A TO247AD
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR3035PTH

MBR3035PTH

Diode Arrays Overview

The MBR3035PTH is a dual common-cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a 30 A average forward current rating and a 35 V repetitive peak reverse voltage. The device utilizes silicon technology in a TO-247AD (TO-3P) package with matte tin-plated leads. Key electrical parameters include a maximum junction temperature of 150 °C, a peak forward surge current of 200 A, and a typical junction-to-case thermal resistance of 1.4 °C/W. The 'H' suffix indicates AEC-Q101 qualification.

Diode Arrays Feature Summary

  • Guard ring structure provides enhanced overvoltage protection capabilities.
  • Low power loss design ensures high efficiency during operation.
  • High surge current capability supports demanding transient loads.
  • AEC-Q101 qualified for automotive reliability standards.

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • DC to DC converters
  • Adapters
  • Monitor circuits
  • TV applications

Diode Arrays Procurement Notes

Verify the specific ordering code includes the 'H' suffix to confirm AEC-Q101 qualification status. Ensure the package type matches the required TO-247AD form factor. Confirm compliance with RoHS directives and halogen-free requirements based on IEC 61249-2-21 definitions before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for low voltage, high frequency applications requiring high efficiency. The dual common-cathode configuration allows for use in full-wave rectification or polarity protection circuits. Consider the 30 A current rating and 35 V blocking voltage when designing power stages. Verify thermal management requirements against the specified junction-to-case thermal resistance.

Diode Arrays Part Context

This part belongs to the MBR30xxPT series from Taiwan Semiconductor, which covers voltage ratings from 35 V to 200 V. The series shares identical mechanical dimensions and general electrical characteristics, differing primarily in reverse voltage ratings. The TO-247AD package is standard for through-hole mounting in high-power discrete semiconductor applications.

Diode Arrays Replacement Considerations

Cross-reference with other MBR3035PT variants from different manufacturers ensuring identical TO-247AD packaging and 30 A/35 V ratings. Verify that substitute components meet the same AEC-Q101 qualification if automotive application is required. Check forward voltage drop and reverse leakage current specifications for compatibility.

Diode Arrays FAQ

What does the 'H' suffix indicate in the MBR3035PTH model number?

The 'H' suffix signifies that the device is qualified according to the AEC-Q101 automotive standard.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 200 A for an 8.3 ms single half sine wave superimposed on the rated load.

Is the MBR3035PTH compliant with environmental directives?

Yes, the device is RoHS compliant and halogen-free according to the IEC 61249-2-21 definition.

MBR3035PTHMBR3035PTH
$0.89
Buy Now

Recent News