Diode Arrays MBR30L120CT product image

MBR30L120CT

$0.77
  • Description:DIODE ARR SCHOT 120V 30A TO220AB
  • Series:-

SKU:b0ed8adc0fbb Category: Brand:

  
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MBR30L120CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 120V 30A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30L120CT

  • Description:DIODE ARR SCHOT 120V 30A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:20 µA @ 120 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30L120CT

MBR30L120CT

Diode Arrays Overview

The MBR30L120CT is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor. It features a TO-220AB package with a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 30 A. The device offers a typical forward voltage of 0.81 V at 15 A and 25°C, with a maximum surge current capability of 200 A. It includes guard ring technology for overvoltage protection and meets JESD 201 class 2 whisker test requirements.

Diode Arrays Feature Summary

  • Guard ring structure provides enhanced overvoltage protection capabilities
  • Low power loss design ensures high efficiency in switching applications
  • High surge current capability supports demanding transient loads

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • DC to DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix when sourcing components. The base part number denotes standard specifications, while the 'H' suffix indicates AEC-Q101 qualification. Confirm packaging details such as tube quantities against official distributor listings to ensure alignment with project requirements.

Diode Arrays Selection Notes

Select this component for low-voltage, high-frequency applications requiring efficient rectification. The dual common cathode configuration allows for use in full-wave circuits. Ensure thermal management accounts for the junction-to-case thermal resistance of 3 °C/W under rated load conditions.

Diode Arrays Part Context

This device belongs to the MBR series of Schottky barrier rectifiers from Taiwan Semiconductor. It utilizes silicon die construction within a TO-220AB flange mount package. The product line emphasizes low forward voltage drop and high reliability for industrial and consumer electronics power conversion systems.

Diode Arrays Replacement Considerations

The MBR30L120CTH serves as the AEC-Q101 qualified variant of this component. Verify pinout compatibility and electrical ratings before substituting with other manufacturers' parts.

Diode Arrays FAQ

What is the maximum non-repetitive forward surge current?

The maximum non-repetitive forward surge current is 200 A for an 8.3 ms single half sine wave superimposed on rated load.

Does the device meet halogen-free standards?

Yes, the MBR30L120CT is halogen-free according to the IEC 61249-2-21 definition.

What is the typical junction-to-case thermal resistance?

The typical junction-to-case thermal resistance is 3 °C/W.

MBR30L120CTMBR30L120CT
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