Single Diodes MBRB10H60HE3_B/I product image

MBRB10H60HE3_B/I

$0.65
  • Description:DIODE SCHOTTKY 60V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:47bf56f5b09d Category: Brand:

  
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MBRB10H60HE3_B/I is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 60V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for MBRB10H60HE3_B/I

  • Description:DIODE SCHOTTKY 60V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:710 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 60 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Diodes datasheet and documents for MBRB10H60HE3_B/I

MBRB10H60HE3_B/I

Single Diodes Overview

The MBRB10H60HE3_B/I is a Schottky barrier rectifier utilizing Vishay's High Barrier Technology, designed for improved high-temperature performance. It features a maximum average forward rectified current of 10 A and a maximum repetitive peak reverse voltage of 60 V. The device offers a low forward voltage drop ranging from 0.55 V to 0.71 V depending on temperature and current conditions, alongside a maximum reverse leakage current of 100 µA at rated voltage. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 °C to +175 °C.

Single Diodes Feature Summary

  • High Barrier Technology ensures enhanced thermal stability and reliability under elevated operating temperatures.
  • Guardring structure provides robust protection against overvoltage events.
  • Low forward voltage drop contributes to reduced power losses and increased system efficiency.
  • Low leakage current minimizes energy waste during reverse bias states.

Single Diodes Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in inductive load circuits
  • DC-to-DC converter output stages
  • Polarity protection applications

Single Diodes Procurement Notes

Verify the specific ordering suffixes against official documentation to confirm package type and qualification grade. Confirm that the HE3 designation aligns with required automotive or industrial reliability standards. Ensure the TO-263AB package matches the intended PCB footprint and thermal management strategy. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single Diodes Selection Notes

Select this component for designs requiring efficient rectification at 60 V reverse blocking capability. The 10 A continuous current rating suits moderate power conversion tasks. Consider the TO-263AB surface mount package for automated assembly processes. Evaluate thermal resistance requirements to ensure adequate heatsinking maintains junction temperatures within the specified operational limits during peak load conditions.

Single Diodes Part Context

This part belongs to the MBR(F,B)10Hxx series, which encompasses various voltage ratings from 35 V to 60 V. The MBRB variant specifically denotes the TO-263AB surface mount package configuration. The HE3 suffix indicates a high-reliability grade compliant with AEC-Q101 standards, distinguishing it from standard consumer-grade equivalents within the same electrical family.

Single Diodes Replacement Considerations

Direct replacements must match the 60 V reverse voltage, 10 A current rating, and TO-263AB package. Verify equivalent forward voltage characteristics and thermal resistance values to maintain circuit performance integrity without redesigning the thermal interface.

MBRB10H60HE3_B/IMBRB10H60HE3_B/I
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