MCAC95N06YHE3-TP

Single FETs, MOSFETs Overview

The MCAC95N06YHE3-TP is an N-channel MOSFET utilizing Split Gate Trench technology, housed in a DFN5060 package. It features a drain-source voltage of 60V and a continuous drain current of 95A at 25°C case temperature. The device exhibits a maximum on-resistance of 3.8mΩ at VGS=10V and 4.5V. Key electrical parameters include a gate charge of 85nC, input capacitance of 5300pF, and a body diode reverse recovery time of 61ns. Thermal resistance from junction to case is 1.1°C/W, with an operating junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Split Gate Trench MOSFET technology for optimized performance
• Moisture Sensitivity Level 1 classification
• Halogen-free green device with UL 94 V-0 flammability rating

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the MCAC95N06YHE3-TP component by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks; MCC does not provide warranty coverage for unauthorized sources. Ensure the ordering suffix indicates RoHS compliance and confirm the specific tape and reel packaging quantity matches project requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling within a compact surface-mount footprint. The DFN5060 package provides excellent thermal dissipation capabilities suitable for power management tasks. Consider the 60V breakdown voltage and low on-resistance characteristics when evaluating efficiency requirements. Verify that the gate drive voltage aligns with the specified thresholds for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the MCAC95N06 series of N-channel MOSFETs manufactured by Micro Commercial Components. It shares the DFN5060 package form factor with other devices in the lineup but is distinguished by its specific electrical ratings and AEC-Q101 qualification status. The HE3 suffix denotes environmental compliance features consistent with the manufacturer's product line.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative components based on matching pinout compatibility, voltage and current ratings, and thermal resistance specifications. Ensure any replacement maintains the required AEC-Q101 qualification if used in automotive contexts.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the MCAC95N06YHE3-TP?

The maximum pulsed drain current (IDM) is rated at 390A.

Does the MCAC95N06YHE3-TP support avalanche energy operation?

Yes, the device has an avalanche energy rating of 1000mJ under specified test conditions.

What is the reverse recovery charge of the internal body diode?

The reverse recovery charge (Qrr) is 54nC.