MJE15034G

Single Bipolar Transistors Overview

The MJE15034G is a single NPN silicon power transistor manufactured by onsemi, designed for high-voltage applications. It features a maximum DC collector current of 4 A and a collector-emitter voltage (VCEO) of 350 V. The device handles a power dissipation of 50 W and operates within a junction temperature range of -65°C to +150°C. Key electrical parameters include a collector-base voltage of 350 V, an emitter-base voltage of 5 V, and a saturation voltage of 500 mV. It has a gain-bandwidth product of 30 MHz and is housed in a TO-220-3 through-hole package.

Single Bipolar Transistors Feature Summary

• High voltage capability with 350 V collector-emitter breakdown
• Robust thermal performance supporting 50 W power dissipation
• Designed for complementary pairing with the MJE15033G PNP transistor

Single Bipolar Transistors Applications

• Audio amplifier output stages
• Linear regulator circuits
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the component authenticity against official onsemi documentation before integration. Confirm that the specific revision matches the required electrical characteristics for your design. Ensure the TO-220-3 package dimensions align with your PCB footprint and thermal management strategy. Check for RoHS compliance status if environmental regulations apply to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required alongside a complementary PNP device. The 350 V rating distinguishes it from lower-voltage alternatives like the MJE15032G. Consider the 4 A current limit and 50 W power dissipation capabilities relative to your load requirements. The TO-220-3 package facilitates manual assembly or standard automated placement processes.

Single Bipolar Transistors Part Context

This part belongs to the MJE15034 series of complementary silicon plastic power transistors. It serves as the NPN counterpart to the MJE15033G PNP transistor, enabling push-pull configurations. The series is engineered for general-purpose power switching and amplification tasks requiring high voltage tolerance and moderate current handling capabilities.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes within the same complementary family include the MJE15033G for the PNP side. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' equivalents.