Single Bipolar Transistors MJE521G product image

MJE521G

$0.23
  • Description:TRANS NPN 40V 4A TO-126
  • Series:-

SKU:55b5ebf62759 Category: Brand:

  
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MJE521G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 40V 4A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE521G

  • Description:TRANS NPN 40V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1A, 1V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE521G

MJE521G

Single Bipolar Transistors Overview

The MJE521G is a silicon NPN power transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 40 V and a continuous collector current capacity of 4 A. The device is housed in a TO-225AA plastic package, providing robust thermal performance with a junction-to-case thermal resistance of 10°C/W. It supports a maximum power dissipation of 1.5 W and operates within a temperature range of -65°C to 150°C.

Single Bipolar Transistors Feature Summary

  • NPN polarity configuration suitable for standard switching circuits
  • High current handling capability up to 4 A
  • Robust thermal management via metal tab mounting
  • Wide operating temperature range for industrial environments

Single Bipolar Transistors Applications

  • General-purpose power switching
  • Amplifier stages
  • Driver circuits requiring moderate current gain

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure component authenticity and traceability. Confirm that the physical marking matches the official datasheet specifications for the MJE521G part number. Inspect leads for straightness and solderability prior to assembly. Ensure storage conditions comply with moisture sensitivity level requirements to prevent package damage during reflow soldering processes.

Single Bipolar Transistors Selection Notes

Select this component when a 40 V NPN transistor with 4 A current capability is required in a TO-225AA package. Consider the 1.5 W power dissipation limit and thermal resistance when designing heat sinking solutions. Evaluate the hFE characteristics against circuit gain requirements. Compare against complementary PNP devices if push-pull configurations are necessary for the application design.

Single Bipolar Transistors Part Context

The MJE521G belongs to the MJE series of power transistors from onsemi, which are widely utilized in consumer electronics and industrial control systems. This series provides reliable performance for medium-power applications. The TO-225AA package is a standard industry form factor compatible with various through-hole mounting techniques, facilitating integration into printed circuit boards requiring durable semiconductor components.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout compatibility and meets or exceeds the original voltage, current, and thermal ratings.

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$0.23
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