MMBD355LT1G

RF Diode Overview

The MMBD355LT1G is a small signal switching diode manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a dual common anode configuration with a peak reverse voltage of 7 V and a forward current rating of 10 mA. The device exhibits a maximum forward voltage of 600 mV and a reverse current of 10 uA. It operates within a temperature range of -55 C to +150 C and has a power dissipation capacity of 225 mW.

RF Diode Feature Summary

• Dual common anode architecture for compact circuit integration
• High thermal stability supporting operation up to 150 C
• Low forward voltage drop for efficient signal switching

RF Diode Applications

• General purpose signal switching circuits
• Protection against reverse polarity in low voltage lines
• Clamping applications in digital logic interfaces

RF Diode Procurement Notes

Verify the specific ordering suffix to confirm packaging format, as the component is available in cut tape, reel, and MouseReel configurations. Ensure compliance requirements such as RoHS status are confirmed against the latest manufacturer documentation before finalizing procurement specifications.

RF Diode Selection Notes

Select this component when a dual diode solution with a common anode is required in a minimal footprint. The 7 V reverse voltage limit defines its suitability for low-voltage signal paths rather than high-voltage power applications. Consider the 10 mA forward current constraint for load compatibility.

RF Diode Part Context

This part belongs to the MMBD355L series of small signal switching diodes from onsemi. It is designed for general-purpose applications requiring fast switching characteristics in a compact SMD form factor. The series provides alternatives for discrete diode implementations where space is constrained.

RF Diode Replacement Considerations

Direct substitutes may include other dual common anode diodes in SOT-23 packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameters such as reverse recovery time and capacitance before substituting.