MMBT5089LT1G

Single Bipolar Transistors Overview

The MMBT5089LT1G is a single NPN silicon bipolar junction transistor (BJT) manufactured by onsemi. It operates with a maximum collector-emitter voltage of 25 V and a collector-base voltage of 35 V, while the emitter-base breakdown is rated at 4.5 V. The device supports a continuous DC collector current of 50 mA and dissipates up to 300 mW of power. Key electrical characteristics include a transition frequency of 50 MHz and a minimum DC current gain of 400 at 100 µA and 5 V. The saturation voltage is specified as 500 mV at 1 mA base and 10 mA collector currents. It functions within a temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Designed for low noise applications using NPN silicon technology
• High DC current gain capability for signal amplification
• Automotive qualification available via S and NSV prefixes

Single Bipolar Transistors Applications

• Low noise amplifier circuits
• General purpose switching applications
• Signal processing stages requiring high gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm automotive qualification status. Standard versions lack AEC-Q101 qualification, whereas S and NSV prefixes indicate compliance for unique site and control change requirements. Confirm RoHS and halogen-free status matches project specifications. Ensure the package type corresponds to SOT-23-3 for surface mount integration. Cross-reference datasheet revisions to validate parameter consistency.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with high current gain and low noise performance is required in a compact surface-mount package. The 25 V collector-emitter rating suits low-voltage signal processing tasks. Consider the 50 MHz transition frequency for bandwidth limitations in amplifier designs. Evaluate the 300 mW power dissipation limit against thermal constraints in the final assembly.

Single Bipolar Transistors Part Context

This part belongs to the MMBT5089 series of low noise transistors from onsemi. It is a single NPN device housed in an SOT-23-3 package. The series is designed for general-purpose amplification and switching in consumer and industrial electronics. It complements other small-signal transistors in the manufacturer's portfolio for discrete circuit design.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include MMBT5088LT1G, which shares similar packaging but differs in voltage ratings. Verify pinout compatibility and electrical limits before substitution. Alternative packages may require schematic redesign.