MMBT8099LT1G

Single Bipolar Transistors Overview

The MMBT8099LT1G is an NPN silicon amplifier transistor manufactured by onsemi. It operates with a collector-emitter voltage of 80 Vdc and a continuous collector current of 500 mAdc. The device features a maximum power dissipation of 225 mW on an FR-5 board and 300 mW on an alumina substrate. Electrical characteristics include a DC current gain ranging from 75 to 300, a current-gain bandwidth product of 150 MHz, and a collector-emitter saturation voltage of 400 mV at specified test conditions. It functions within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding signal amplification tasks
• Compact surface-mount design optimized for space-constrained PCB layouts
• Compliant with environmental standards including lead-free and halogen-free specifications

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Switching applications requiring moderate voltage ratings
• Power management systems utilizing small-signal transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and shipping configuration. Ensure compliance with RoHS and Pb-Free requirements if mandated by project specifications. Confirm thermal management capabilities align with the intended operating environment and board material constraints before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require an NPN transistor with an 80 V collector-emitter breakdown voltage. Consider the 500 mA continuous current rating and 225 mW power dissipation limits relative to the available thermal resistance. Evaluate the 150 MHz bandwidth requirement against the application's frequency needs to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This device belongs to the MMBT8099L series of NPN silicon transistors produced by onsemi. It utilizes the SOT-23 (TO-236) surface-mount package, designated as Case 318. The component is designed for general-purpose amplifier and switching roles within electronic systems requiring reliable small-signal performance in a compact form factor.

Single Bipolar Transistors Replacement Considerations

Consult official onsemi documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current limits, and package dimensions to ensure functional compatibility during replacement scenarios.