Single Bipolar Transistors MN638S product image

MN638S

  • Description:TRANS NPN 430V 6A TO-220S
  • Series:-

SKU:751529254e42 Category: Brand:

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MN638S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 430V 6A TO-220S. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MN638S

  • Description:TRANS NPN 430V 6A TO-220S
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):430 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 4A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1500 @ 3A, 2V
  • Power - Max:60 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-220S
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MN638S

MN638S

Single Bipolar Transistors Overview

The MN638S is a power transistor manufactured by Sanken Electric USA Inc. It features a collector-base voltage (VCBO) of 380±50 V and a collector-emitter breakdown voltage (V(BR)CEO) ranging from 330 to 430 V. The device supports a maximum continuous collector current (IC) of 6 A and a peak collector current of 1 A. With a maximum power dissipation (PC) of 60 W at a case temperature of 25°C, it operates within a junction temperature range of -55°C to +150°C. The minimum DC current gain (hFE) is 1500 at IC=3A and VCE=2V.

Single Bipolar Transistors Feature Summary

  • High-voltage capability with a collector-base voltage rating up to 430 V
  • High DC current gain ensuring efficient switching performance
  • Robust thermal management with a maximum junction temperature of 150°C

Single Bipolar Transistors Applications

  • Power switching circuits in industrial equipment
  • Inverter applications requiring high-voltage handling
  • General-purpose power amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific VCBO tolerance variant required for your design, as ratings are specified as 380±50 V. Confirm that the TO-220S package dimensions align with your PCB layout constraints. Ensure adequate heatsinking is provided to maintain the case temperature at or below 25°C for full 60 W power dissipation. Check for any RoHS compliance documentation if environmental regulations apply to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN power transistor with exceptional current gain is required. The wide breakdown voltage range accommodates various bus voltages. Consider the thermal resistance characteristics for your specific mounting conditions. Note that the datasheet explicitly states this part is not recommended for new designs; evaluate alternative modern components for future projects.

Single Bipolar Transistors Part Context

The MN638S belongs to Sanken Electric's lineup of discrete power transistors designed for robust industrial and automotive applications. It utilizes a TO-220S plastic package for reliable mounting and heat dissipation. This component serves as a fundamental building block for high-power switching topologies where high voltage isolation and stable gain are critical operational parameters.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly marks this component as 'Not Recommended for New Designs.' Engineers should consult Sanken Electric's current portfolio for modern replacements that offer improved efficiency or packaging options while maintaining similar electrical specifications.

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