Single Bipolar Transistors MPSW45G product image

MPSW45G

  • Description:TRANS NPN DARL 40V 1A TO92
  • Series:-

SKU:c4ee2bc5d8de Category: Brand:

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MPSW45G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 40V 1A TO92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPSW45G

  • Description:TRANS NPN DARL 40V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25000 @ 200mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)

Single Bipolar Transistors datasheet and documents for MPSW45G

MPSW45G

Single Bipolar Transistors Overview

The MPSW45G is an NPN Darlington transistor manufactured by onsemi, housed in a TO-92 (TO-226) through-hole package. It features a maximum collector-emitter voltage of 40 V and a continuous collector current rating of 1 A. The device exhibits a high DC current gain of at least 25,000 at 200 mA and 5 V. Key electrical parameters include a transition frequency of 100 MHz, a maximum power dissipation of 1 W, and a collector cutoff current of 100 nA. The saturation voltage is specified at 1.5 V under conditions of 2 mA base current and 1 A collector current.

Single Bipolar Transistors Feature Summary

  • High current amplification capability provided by the Darlington configuration
  • Robust switching performance with defined saturation characteristics
  • Suitable for general-purpose applications within specified thermal limits

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-power amplifier stages
  • Driver interfaces requiring high input impedance

Single Bipolar Transistors Procurement Notes

Verify component authenticity against manufacturer specifications. Confirm package type matches TO-92 requirements. Check datasheet for RoHS compliance status as historical records indicate potential non-compliance for standard variants. Ensure supply chain sources provide valid traceability documentation for quality assurance purposes.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required for low-level signal control. Evaluate thermal management capabilities given the 1 W power dissipation limit in the TO-92 package. Compare alternative transistors if higher voltage ratings or surface-mount packaging are necessary for the specific design constraints.

Single Bipolar Transistors Part Context

This part belongs to the MPSW series of NPN Darlington transistors designed for robust switching applications. The MPSW45 variant specifically targets scenarios needing significant current amplification from small control signals. It serves as a discrete semiconductor solution for analog and digital circuit designs requiring reliable ON/OFF operation.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN Darlington transistors in TO-92 packages. Verify pinout compatibility and electrical parameter alignment before implementation.

MPSW45GMPSW45G

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