MSS30-B46-B45

Description：RF DIODE SCHOTTKY 3V 100MW E45
Series：MSS30-xxx-x

SKU:155db60b8c45 Category: RF Diodes Brand: MACOM Technology Solutions

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Product introduction

MSS30-B46-B45 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 3V 100MW E45. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MSS30-B46-B45

Description：RF DIODE SCHOTTKY 3V 100MW E45
Series：MSS30-xxx-x
Mfr：MACOM Technology Solutions
Package：Tray
Diode Type：Schottky - 1 Bridge
Voltage - Peak Reverse (Max)：3V
Current - Max：50 mA
Capacitance @ Vr, F：0.13pF @ 0V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：100 mW
Operating Temperature：-65°C ~ 150°C
Package / Case：E45
Supplier Device Package：E45
Grade：-
Qualification：-

RF Diode datasheet and documents for MSS30-B46-B45

MSS30-B46-B45

RF Diode Overview

The MSS30-B46-B45 is a low barrier silicon Schottky diode from MACOM's MSS30 series, fabricated on N-type epitaxial substrates. It features a crossover ring configuration with four elements designed for K-band mixer applications. The device utilizes a ceramic metal-sealed cofired package with flat quad terminals, supporting surface mount technology. Key electrical characteristics include a maximum capacitance of 0.125 pF and a maximum power dissipation of 0.075 W. The component operates within the microwave frequency range and offers tight delta matching capabilities.

RF Diode Feature Summary

Low barrier silicon Schottky technology for fast switching times
Crossover ring configuration with four elements for mixer applications
Surface mount ceramic metal-sealed cofired package design
Tight delta matching characteristics for precision performance

RF Diode Applications

K-band mixer circuits
RF signal rectification
Microwave frequency detection systems

RF Diode Procurement Notes

Verify the specific ordering suffix to ensure the correct package variant and tape-and-reel quantity are selected. Confirm that the requested components match the factory pack quantity specifications provided in the official datasheet. Ensure compliance with RoHS standards and check for any specific handling requirements associated with the ceramic metal-sealed cofired package during assembly.

RF Diode Selection Notes

Select this component when K-band mixer functionality is required with low forward voltage drop characteristics. The four-element crossover ring structure provides necessary symmetry for balanced mixer operations. Consider the 0.125 pF maximum capacitance limit for high-frequency signal integrity. The surface mount format facilitates automated assembly processes while maintaining thermal stability through the ceramic construction.

RF Diode Part Context

This part belongs to MACOM's MSS30 series of low barrier silicon Schottky diodes. These devices are engineered for high-frequency applications requiring precise matching and fast switching speeds. The series utilizes proprietary fabrication techniques on N-type epitaxial substrates to achieve consistent performance across multiple elements within the crossover ring configuration.