MSS40-141-E25

RF Diode Overview

The MSS40-141-E25 is a single junction medium barrier silicon Schottky diode from the MSS40 series, designed for high-frequency mixer applications. It operates within an ambient temperature range of -65°C to +150°C and supports a maximum forward current of 50 mA with a power dissipation rating of 100 mW per junction at 25°C. Key electrical specifications include a typical forward voltage (VF) of 0.42 V, a minimum breakdown voltage (VBR) of 3 V, and a typical cutoff frequency (FCO) of 265 GHz. The device features a typical capacitance (CJ) ranging from 0.16 pF to 0.22 pF, a typical series resistance (RS) of 10 Ω, and a maximum differential resistance (RD) of 265 Ω.

RF Diode Feature Summary

• Utilizes proprietary processes on N-type epitaxial substrates to achieve industry-leading cutoff frequencies.
• Optimized for mixer performance with local oscillator power requirements between 0 dBm and +6 dBm per diode.
• Offers matching options for forward voltage, dynamic resistance, and junction capacitance across the series.

RF Diode Applications

• High-performance RF mixers
• Local oscillator detection circuits
• Frequency multiplier stages

RF Diode Procurement Notes

Verify the specific package outline code E25 against mechanical constraints before ordering. Confirm that the standard operating temperature range of -65°C to +150°C aligns with the thermal design of the target system. Ensure that the 100 mW power dissipation limit is not exceeded under worst-case ambient conditions to maintain reliability.

RF Diode Selection Notes

Select this component when a high cutoff frequency near 265 GHz is required in a packaged configuration. Compare the 0.42 V forward voltage and 10 Ω series resistance against other MSS40 variants to ensure compatibility with the intended drive levels. Consider the single junction topology if complex bridge or ring configurations are unnecessary for the circuit design.

RF Diode Part Context

This device belongs to the MSS40-xxx-x Series, which encompasses various silicon Schottky diodes including chip, beam lead, and packaged options. The series provides flexibility through different barrier heights and junction configurations to suit diverse microwave and millimeter-wave requirements.

RF Diode Replacement Considerations

MSS40-148-E25 offers similar packaging with slightly lower forward voltage and capacitance but reduced cutoff frequency. MSS40-141-H20 shares identical electrical parameters but utilizes a different package outline H20 instead of E25.

RF Diode FAQ

What is the typical cutoff frequency for the MSS40-141-E25?

The typical cutoff frequency (FCO) is 265 GHz, measured at a forward current of 5 mA.

How does the power dissipation rating change with temperature?

The device dissipates 100 mW per junction at 25°C, with linear derating to 0 mW at an ambient temperature of +150°C.

Is high-reliability screening available for this part?

Yes, Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 is available for devices in this series.