N0412N-S19-AY

$2.11

Description：MOSFET N-CH 40V 100A TO220
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:059b220282cd Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

N0412N-S19-AY is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 40V 100A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for N0412N-S19-AY

Description：MOSFET N-CH 40V 100A TO220
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5550 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 119W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for N0412N-S19-AY

N0412N-S19-AY

Single FETs, MOSFETs Overview

The N0412N-S19-AY is an N-channel power MOSFET from Renesas Electronics Corporation, designed for high-current switching applications. It features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 100 A at 25°C ambient temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 3.7 mΩ at VGS = 10 V and ID = 50 A, with a typical input capacitance (Ciss) of 5550 pF. Thermal performance includes a power dissipation of 1.5 W at Ta and 119 W at Tc. It is housed in a through-hole TO-220 package.

Single FETs, MOSFETs Feature Summary

Low on-state resistance for efficient conduction
High continuous drain current capability
Low input capacitance for fast switching

Single FETs, MOSFETs Applications

High current switching applications
Power management circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix S19-AY against the manufacturer's official datasheet to confirm pinout and thermal specifications. Ensure the TO-220 through-hole package matches your PCB footprint requirements. Cross-reference the RDS(on) and Id ratings with your specific thermal management design constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V N-channel MOSFET with high current handling is required. The low RDS(on) minimizes conduction losses in high-current paths. Consider the TO-220 package for through-hole assembly and adequate heat sinking capabilities. Verify that the gate drive voltage supports the specified VGS conditions for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Renesas' Single FETs category, specifically N-channel MOSFETs. It is an active component used primarily in power electronics. The N0412N series is engineered for robust performance in demanding switching environments, offering a balance of low resistance and high current capacity within a standard through-hole package.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas documentation for direct substitutes. Ensure any replacement maintains the 40 V Vdss, 100 A Id, and TO-220 package compatibility. Verify equivalent RDS(on) and thermal characteristics to avoid derating issues in the existing circuit design.