Single FETs, MOSFETs NP60N055KUG-E1-AY product image

NP60N055KUG-E1-AY

  • Description:MOSFET N-CH 55V 60A TO263
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:504130b069bf Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

NP60N055KUG-E1-AY is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 55V 60A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NP60N055KUG-E1-AY

  • Description:MOSFET N-CH 55V 60A TO263
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:9.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta), 88W (Tc)
  • Operating Temperature:175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for NP60N055KUG-E1-AY

NP60N055KUG-E1-AY

Single FETs, MOSFETs Overview

The NP60N055KUG-E1-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a 55V drain-source voltage rating and supports a continuous drain current of 60A at case temperature. The device exhibits a maximum on-resistance of 9.4mΩ at 10V gate drive. Packaged in a TO-263 (MP-25ZK) surface-mount format, it is designed for high-current switching applications with industrial qualification levels.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode construction
  • Low on-state resistance for efficient power handling
  • Surface-mount package design for automated assembly

Single FETs, MOSFETs Applications

  • High current switching circuits
  • Industrial power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E1-AY against official Renesas documentation to confirm package type and qualification level. Ensure compatibility with TO-263 mounting requirements. Confirm active status through authorized channels before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 55V blocking capability and low conduction losses. Evaluate thermal performance based on the 88W case power dissipation rating. Compare gate charge specifications against driver capabilities for optimal switching speed.

Single FETs, MOSFETs Part Context

This part belongs to Renesas' automotive and industrial power MOSFET portfolio. It utilizes silicon technology optimized for high reliability. The MP-25ZK package provides robust thermal characteristics suitable for demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the NP60N055 series. Verify pinout compatibility and electrical parameter equivalence before substitution.

NP60N055KUG-E1-AYNP60N055KUG-E1-AY

Click on the inquiry

Recent News