NST848BF3T5G

Single Bipolar Transistors Overview

The NST848BF3T5G is a single NPN bipolar junction transistor manufactured by onsemi, designed for surface-mount applications in the SOT-1123 package. It utilizes silicon technology and features a maximum collector current of 100 mA with a collector-emitter voltage rating of 30 V. The device offers a collector-base voltage of 50 V and an emitter-base voltage of 6 V. Key electrical characteristics include a gain-bandwidth product of 100 MHz and a DC current gain of 200 at 2 mA and 5 V. Power dissipation is rated at 290 mW, with a saturation voltage of 600 mV. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Single NPN configuration optimized for general-purpose switching and amplification tasks
• High DC current gain of 200 ensures efficient signal control with minimal base drive requirements
• Robust thermal performance supports operation across extended temperature ranges up to 150°C

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Low-power switching applications in consumer electronics
• Interface logic level translation stages

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified partners. Confirm RoHS compliance status via official datasheets prior to integration. Ensure storage conditions maintain device integrity. Cross-reference part numbers carefully to avoid confusion with similar variants. Request batch-specific documentation for quality assurance purposes during procurement processes.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with moderate voltage ratings and high current gain is required. The SOT-1123 package suits space-constrained designs. Consider the 30 V collector-emitter limit and 100 mA current capacity against circuit demands. Evaluate thermal management needs given the 290 mW power dissipation rating. Compare gain bandwidth specifications against signal frequency requirements to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This device belongs to onsemi's portfolio of single bipolar transistors. It complements other small-signal components within the same series, such as the NST847BF3T5G, which shares similar packaging but differs in voltage ratings. These transistors are categorized under general-purpose BJTs, serving foundational roles in discrete semiconductor design for various electronic systems.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers: None identified.