NTB23N03RT4

Single FETs, MOSFETs Overview

The NTB23N03RT4 is an N-channel enhancement mode MOSFET from onsemi, housed in a D2PAK surface-mount package. It features a maximum drain-source voltage (Vds) of 25 V and a continuous drain current (Id) of 23 A. The device exhibits a maximum on-state resistance (Rds(on)) of 3.8 mΩ at Vgs = 10 V. Operating within a temperature range of -55°C to +175°C, it supports high-efficiency power switching applications with robust thermal performance.

Single FETs, MOSFETs Feature Summary

• High-current capability with 23 A continuous drain current rating
• Ultra-low on-resistance for minimized conduction losses
• Extended operating temperature range up to 175°C
• D2PAK package optimized for surface mount assembly

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Load switch circuits
• Power management modules
• Industrial motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the RT4 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the D2PAK footprint matches your PCB design guidelines. Check for specific automotive or industrial qualification requirements if applicable to your system reliability standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low voltage drop and high current handling are critical. The 25 V rating suits 12 V systems. Ensure adequate heatsinking or copper area for thermal dissipation given the 23 A capacity. Compare Rds(on) values against alternative packages to balance cost and thermal performance for your specific power density requirements.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's discrete MOSFET portfolio, designed for general-purpose power switching. It complements other low-voltage N-channel devices in the lineup, offering a balance of conductivity and switching speed. The D2PAK form factor provides superior thermal characteristics compared to smaller SMD packages, making it suitable for medium-power applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes with similar Rds(on) and Id ratings. Verify that any replacement maintains the 25 V Vds limit and 175°C junction temperature capability. Ensure the new component's gate charge characteristics align with your driver circuit capabilities.