NTB5411NT4G

Single FETs, MOSFETs Overview

The NTB5411NT4G is a single N-channel power MOSFET manufactured by onsemi. It features a D2PAK or TO-220 package and supports a drain-source breakdown voltage of 60 V with a continuous drain current capacity of 80 A. The device utilizes silicon technology and operates within an ambient temperature range of -55°C to +175°C. It is designed for surface mount or through-hole installation and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

• Low on-resistance to minimize conduction losses
• Optimized gate charge to reduce switching losses
• High current capability suitable for demanding applications

Single FETs, MOSFETs Applications

• CPU power delivery systems
• DC-DC converters
• High side switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (D2PAK vs. TO-220) required for your design, as datasheets may list both. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure thermal management solutions match the 80 A current rating under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 60 V blocking voltage and high current handling up to 80 A. Consider the low Rds(on) for efficiency in power conversion. Verify that the gate drive characteristics align with the optimized gate charge specifications for the target switching frequency.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's Power MOSFET family, specifically designed for general-purpose power switching. It shares architectural similarities with other devices in the NTB/NTP series, offering robust performance in compact packages for industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Potential substitutes include NTB5412NT4G for lower current requirements or NTB5426NT4G for higher current needs. Verify pin compatibility and electrical parameters before substitution.