NTD20N06LT4

Description：MOSFET N-CH 60V 20A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:35d6104d5cf2 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NTD20N06LT4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 20A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD20N06LT4

Description：MOSFET N-CH 60V 20A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：990 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.36W (Ta), 60W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NTD20N06LT4

NTD20N06LT4

Single FETs, MOSFETs Overview

The onsemi NTD20N06LT4G is an N-channel enhancement mode power MOSFET housed in a DPAK (TO-252) surface-mount package. It features a maximum drain-to-source voltage of 60 V and a continuous drain current rating of 20 A at 25°C ambient temperature. The device exhibits a typical static drain-to-source on-resistance of 39 mΩ at VGS = 5.0 V and ID = 10 A, with a maximum gate threshold voltage of 2.0 V. Total gate charge is typically 16.6 nC at VGS = 5.0 V. The component supports a junction temperature range from -55°C to +175°C and offers a single-pulse avalanche energy capability of 128 mJ.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive architecture enabling efficient control with low gate voltages
High-speed switching performance optimized for high-frequency applications
Robust avalanche energy handling capability for unclamped inductive load protection

Single FETs, MOSFETs Applications

Power supplies
Converters
Power motor controls
Bridge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format. The 'T4' suffix indicates tape and reel packaging containing 2500 units per reel. Confirm that the required variant meets AEC-Q101 qualification standards if automotive compliance is necessary, as this applies specifically to the NTDV20N06L designation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring logic-level compatibility with standard gate drivers operating at 5 V. Ensure thermal management strategies account for the specified thermal resistance values under intended PCB copper area conditions. Validate that peak pulsed currents remain within the 60 A limit and that avalanche energy requirements do not exceed the rated 128 mJ specification.

Single FETs, MOSFETs Part Context

This part belongs to the NTD series of N-channel power MOSFETs designed for low-voltage, high-speed switching environments. It utilizes silicon technology and is manufactured by onsemi. The device is available in both rail and tape-and-reel shipping formats, providing flexibility for various manufacturing assembly processes.