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NTD4969N-35G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9.4A/41A IPAK. Review the specifications below when checking this part for your BOM.
The NTD4969N-35G is a Power Trench MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features an N-channel configuration with a drain-source voltage rating of 30V and a low on-resistance to minimize conduction losses. The device utilizes advanced trench technology to achieve optimized gate charge characteristics, reducing driver losses and improving switching performance. It is housed in a DPAK package, suitable for surface-mount assembly in compact designs.
Verify the specific suffix '35G' against official datasheets, as standard listings often reference the '1G' variant. Confirm RoHS compliance status and check for discontinuance notices from onsemi, as older trench MOSFETs may have limited availability or be subject to product phase-out schedules.
Select this component for applications requiring a 30V N-channel switch with low thermal resistance. Ensure the drive voltage matches the specified gate threshold for optimal Rds(on) performance. Verify that the DPAK package footprint aligns with the PCB layout requirements and that the thermal management strategy supports the device's power dissipation capabilities.
This part belongs to onsemi's Power Trench MOSFET family, which focuses on minimizing both conduction and switching losses. The NTD4969 series is engineered for general-purpose power switching, offering a balance between voltage rating and current handling capability in a cost-effective surface-mount package.
Consult official substitution guides for equivalents such as the NTD4969N-1G. Verify pinout compatibility and electrical parameter margins before replacing.
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