Single FETs, MOSFETs NTD4969N-35G product image

NTD4969N-35G

$0.21
  • Description:MOSFET N-CH 30V 9.4A/41A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube

SKU:36b55c08627a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

NTD4969N-35G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9.4A/41A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD4969N-35G

  • Description:MOSFET N-CH 30V 9.4A/41A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:837 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.38W (Ta), 26.3W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for NTD4969N-35G

NTD4969N-35G

Single FETs, MOSFETs Overview

The NTD4969N-35G is a Power Trench MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features an N-channel configuration with a drain-source voltage rating of 30V and a low on-resistance to minimize conduction losses. The device utilizes advanced trench technology to achieve optimized gate charge characteristics, reducing driver losses and improving switching performance. It is housed in a DPAK package, suitable for surface-mount assembly in compact designs.

Single FETs, MOSFETs Feature Summary

  • Power Trench MOSFET technology for enhanced efficiency
  • Low on-resistance to reduce conduction losses
  • Optimized gate charge for improved switching speed
  • DPAK surface-mount packaging

Single FETs, MOSFETs Applications

  • DC-DC converters
  • CPU power delivery systems
  • Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '35G' against official datasheets, as standard listings often reference the '1G' variant. Confirm RoHS compliance status and check for discontinuance notices from onsemi, as older trench MOSFETs may have limited availability or be subject to product phase-out schedules.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30V N-channel switch with low thermal resistance. Ensure the drive voltage matches the specified gate threshold for optimal Rds(on) performance. Verify that the DPAK package footprint aligns with the PCB layout requirements and that the thermal management strategy supports the device's power dissipation capabilities.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's Power Trench MOSFET family, which focuses on minimizing both conduction and switching losses. The NTD4969 series is engineered for general-purpose power switching, offering a balance between voltage rating and current handling capability in a cost-effective surface-mount package.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalents such as the NTD4969N-1G. Verify pinout compatibility and electrical parameter margins before replacing.

NTD4969N-35GNTD4969N-35G
$0.21
Buy Now

Recent News