NTMFSS0D9N03P8

Single FETs, MOSFETs Overview

The NTMFSS0D9N03P8 is a single N-channel silicon power MOSFET manufactured by onsemi. It features a source-down TDFN9 (5x6) package and is rated for a drain-source voltage of 30 V with a continuous drain current of 294 A at case temperature. The device exhibits a maximum on-resistance of 1.0 mΩ. Power dissipation capabilities are specified as 3 W at ambient temperature and 125 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Source-down thermal architecture for efficient heat transfer
• Wide Safe Operating Area (SOA) performance
• Low on-resistance for high-current applications

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor control systems
• Power distribution units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix P8 to confirm the TDFN9 5x6 package configuration. Ensure that the sourcing channel provides official documentation matching the 30V rating and 1.0 mΩ resistance specifications. Confirm compliance with RoHS standards before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current handling are required in a compact surface-mount footprint. The source-down design facilitates superior thermal management compared to standard configurations. Evaluate thermal resistance requirements against the 125 W case dissipation limit for the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of wide SOA power MOSFETs designed for robust operation under high stress conditions. The TDFN9 package offers a balance between electrical performance and thermal efficiency, suitable for modern power electronics requiring high density.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other onsemi parts in the NTMFS series for pin-compatible alternatives. Verify that substitute devices meet or exceed the 30V breakdown voltage and 1.0 mΩ on-resistance limits.