NTMS4935NR2G

Single FETs, MOSFETs Overview

The NTMS4935NR2G is a single N-channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes SO-8FL surface-mount packaging and operates with a drain-source voltage rating of 30 V. The device supports a continuous drain current of 14 A at ambient temperature and 93 A at case temperature. Key electrical characteristics include a maximum gate-source voltage of ±20 V, a typical gate charge of 22 nC at 4.5 V, and a maximum power dissipation of 930 mW at ambient conditions.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode architecture for efficient switching control
• SO-8FL surface-mount package design optimized for high-density PCB layouts
• Low gate charge capability to facilitate rapid switching transitions

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring compact form factors
• Power management modules in portable electronic devices
• Load switching applications in battery-powered systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix NR2G against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard reflow soldering profiles for SO-8FL packages. Cross-reference thermal resistance values from the manufacturer's documentation to validate heat dissipation requirements for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET is required in an SO-8FL footprint. Compare the 14 A continuous drain current rating against circuit load demands. Evaluate the 930 mW power dissipation limit relative to available board space and cooling methods to ensure reliable operation under expected thermal conditions.

Single FETs, MOSFETs Part Context

This part belongs to the NTMS series of Power MOSFETs designed for low-voltage, high-current applications. The series emphasizes small outline footprints suitable for modern electronics. The NTMS4935NR2G variant specifically targets designs needing robust switching performance within constrained physical dimensions.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements must match the 30 V rating, N-channel configuration, and SO-8FL package type. Verify that alternative parts meet or exceed the 14 A current and 930 mW power dissipation specifications.