Single FETs, MOSFETs NTMYS025N06CLTWG product image

NTMYS025N06CLTWG

$1.22
  • Description:MOSFET N-CH 60V 8.5A/21A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7d2f0831dbbc Category: Brand:

  
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NTMYS025N06CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 8.5A/21A 4LFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMYS025N06CLTWG

  • Description:MOSFET N-CH 60V 8.5A/21A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:27.5mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 24W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NTMYS025N06CLTWG

NTMYS025N06CLTWG

Single FETs, MOSFETs Overview

The NTMYS025N06CLTWG is a single N-channel Power MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 17 A at case temperature (T_C = 100°C). The device utilizes the LFPAK4 (5x6 mm) surface-mount package to minimize thermal resistance and footprint. Key electrical characteristics include a low on-resistance (R_DS(on)) of 2.5 mΩ at V_GS = 10 V, ensuring minimal conduction losses. The component operates within a junction temperature range of -55°C to +175°C and meets automotive reliability standards.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance design minimizes conduction losses for improved system efficiency
  • LFPAK4 compact package enables space-constrained PCB layouts with enhanced thermal performance
  • Automotive-grade qualification ensures reliability in demanding operating environments

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • DC-DC converter circuits
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix TWG to confirm packaging type and compliance status. Ensure the procurement source provides official datasheets confirming the LFPAK4 package and automotive grade specifications. Cross-reference the manufacturer's ordering information to validate availability and lead times through authorized channels.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low R_DS(on) is required for automotive or industrial DC-DC conversion. The LFPAK4 package is suitable for applications needing efficient heat dissipation in limited board space. Compare total power loss calculations against alternative packages to ensure thermal management requirements are met under specific load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the NVMYS/NTMYS series of automotive-grade MOSFETs from onsemi. These components are engineered for robust performance in harsh environments, featuring advanced trench technology. The series supports various voltage ratings and current capabilities, providing designers with scalable solutions for modern power electronics while maintaining strict automotive quality standards.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference guide for verified equivalents. Ensure any substitute matches the 60 V rating, LFPAK4 footprint, and R_DS(on) specifications. Verify that replacement parts maintain AEC-Q101 certification if used in automotive contexts.

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