NTP6411ANG

Single FETs, MOSFETs Overview

The NTP6411ANG is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 100 V and a continuous drain current of 76 A at 25°C. The device has a typical on-resistance of 13 mΩ and a power dissipation rating of 188 W in a TO-220 package. It operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction
• Low on-resistance for efficient conduction
• High current handling capability
• Robust thermal performance

Single FETs, MOSFETs Applications

• Power switching applications
• DC-DC converters
• Motor control circuits
• Load switching

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official onsemi documentation, as datasheets may specify variations or revisions. Confirm package type and pinout compatibility with your design requirements before procurement. Ensure environmental compliance standards meet your project specifications.

Single FETs, MOSFETs Selection Notes

Consider the thermal resistance and heat sinking requirements given the 188 W power dissipation rating. Evaluate the gate charge characteristics for switching speed needs. Ensure the operating voltage and current limits are not exceeded under all expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to onsemi's discrete power MOSFET lineup, designed for general-purpose power switching. It utilizes advanced trench technology to achieve low on-resistance and high efficiency. The TO-220 package provides robust mechanical stability and effective heat dissipation for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements like NTP6410ANG if parameters match exactly. Verify pinout compatibility and electrical specifications such as Vds, Id, and Rds(on) before substituting. Consult onsemi's official cross-reference guides for validated alternatives.