NVB099N65S3

Single FETs, MOSFETs Overview

The NVB099N65S3 is an N-channel enhancement mode MOSFET from the SUPERFET III family, utilizing charge balance technology for low on-resistance and gate charge. It features a 650V drain-source voltage rating and a continuous drain current of 30A at case temperature of 25°C. The typical on-resistance is 99mΩ at Vgs=10V. Key electrical parameters include a gate charge of 61nC, threshold voltage of 2.5V, and maximum power dissipation of 227W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• SUPERFET III architecture with charge balance technology for optimized performance
• Automotive grade reliability compliant with AEC-Q101 standards
• Optimized body diode reverse recovery characteristics for reduced EMI
• High dv/dt capability for robust switching performance

Single FETs, MOSFETs Applications

• Automotive power supply systems
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Server and telecom power modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm package type and tape/reel specifications. Ensure the component meets AEC-Q101 automotive qualification requirements if intended for vehicle applications. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in 650V applications. The low gate charge facilitates easier driver design and reduces switching losses. Consider thermal management capabilities given the 227W power dissipation rating. Evaluate system voltage spikes to ensure operation remains within the 650V breakdown limit under all transient conditions.

Single FETs, MOSFETs Part Context

This device belongs to the SUPERFET III series, representing advanced superjunction MOSFET technology. It integrates optimized body diode characteristics to minimize reverse recovery losses. The TO-263 surface mount package provides efficient heat dissipation for compact power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include NVB082N65S3F and NVBG095N65S3F. Verify pinout compatibility and thermal resistance values when replacing. Check that replacement parts meet the same AEC-Q101 automotive qualification standards.