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NVD3055L170T4G-VF01 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 9A DPAK. Review the specifications below when checking this part for your BOM.
The NVD3055L170T4G-VF01 is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and a continuous drain current of 9 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 170 mΩ and a typical gate charge of 4.7 nC at 5 V. It operates within a junction temperature range of -55°C to +175°C and is housed in a DPAK (TO-252) surface-mount package with three pins.
Verify the specific suffix VF01 against official datasheets to confirm it denotes the correct automotive qualification and tape-and-reel packaging format. Ensure the component matches the required RoHS compliance status and material declaration requirements for your target market regulations before finalizing procurement orders.
Select this component when a 60 V rating and 9 A continuous current capability are required in a compact DPAK footprint. The 170 mΩ on-resistance offers a balance between conduction losses and cost for low-voltage applications. Confirm that the logic-level gate drive characteristics align with the available control voltage levels in the design.
This part belongs to the NVD3055 series of N-channel power MOSFETs designed for automotive and industrial use. The 'VF01' suffix typically indicates specific automotive qualification and packaging variations compared to standard commercial versions. It serves as a robust switching element for low-side or high-side configurations in 12V or 24V systems.
Direct substitutes include NTD3055L170T4G and NVD3055-094T4G-VF01, provided pinout and electrical parameters match the design requirements.
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NVD3055L170T4G-VF01 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 9A…
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