PJD16P06A_L2_00001

Single FETs, MOSFETs Overview

The PJD16P06A is a 60V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in a TO-252AA package. It features a maximum continuous drain current of -16 A at 25°C and a maximum pulsed drain current of -64 A. The device exhibits a low on-state resistance, with RDS(on) less than 48 mΩ at VGS=-10V and ID=-8A, and less than 65 mΩ at VGS=-4.5V and ID=-4A. Key electrical parameters include a gate charge of 22 nC, an input capacitance of 1256 pF, and a breakdown voltage of -60 V. Thermal characteristics specify a junction-to-case thermal resistance of 5 °C/W and a power dissipation rating of 25 W at 25°C.

Single FETs, MOSFETs Feature Summary

• High switching speed capability
• Improved dv/dt performance
• Low gate charge for efficient drive requirements
• Low reverse transfer capacitance

Single FETs, MOSFETs Applications

• Power management circuits
• DC-DC converter topologies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm that the component meets EU RoHS 2.0 standards and IEC 61249 green molding compound requirements as specified by the manufacturer. Ensure compatibility with MIL-STD-750 solderability testing methods for assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component based on the required voltage and current ratings for the target application. Evaluate the thermal resistance values to determine appropriate heatsinking or PCB copper pad requirements. Consider the gate threshold voltage and total gate charge when designing the driver circuitry to ensure optimal switching performance and minimize losses.

Single FETs, MOSFETs Part Context

This part belongs to the P-channel MOSFET category within Panjit's discrete semiconductor portfolio. It utilizes silicon technology and is designed for surface-mount installation. The device is intended for general-purpose switching applications where low on-resistance and high efficiency are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for alternative parts offering similar voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before substitution.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current rating?

The maximum pulsed drain current (IDM) is rated at -64 A at a case temperature of 25°C.

Does the device meet environmental compliance standards?

Yes, the device is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per the IEC 61249 standard.