PJQ4460AP_R2_00001

Single FETs, MOSFETs Overview

The PJQ4460AP_R2_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and high-density cell design to achieve an ultra-low on-resistance of 72 mΩ at VGS=10V and ID=6A, or 88 mΩ at VGS=4.5V and ID=3A. The device supports a continuous drain current of 11 A at TC=25°C and offers a gate charge of 9.3 nC. It is housed in a DFN3333-8L package with a maximum junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Advanced Trench Process Technology for enhanced performance
• High density cell design enabling ultra low on-resistance
• Lead-free construction compliant with EU RoHS 2.0 standards
• Green molding compound meeting IEC 61249 standard requirements

Single FETs, MOSFETs Applications

• Standard use and operation examples as defined by manufacturer documentation
• General switching applications within specified voltage and current limits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R2_00001 against official Panjit documentation to confirm packaging details and compliance status. Ensure that the DFN3333-8L package dimensions and pad layout match your PCB design requirements. Confirm that the application does not involve life-saving or high-reliability equipment, as these products are not authorized for such uses without further testing.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-Channel MOSFET with low on-resistance is required. Consider the thermal resistance values and power dissipation limits relative to your operating environment. Verify that the gate threshold voltage and total gate charge align with your driver capabilities. Ensure the DFN3333-8L package is suitable for your assembly process and space constraints.

Single FETs, MOSFETs Part Context

This part belongs to the PJQ4460AP series of N-Channel Enhancement Mode MOSFETs from Panjit. It is designed for general-purpose switching applications where low on-resistance and efficient thermal management are important. The device is available in a lead-free, halogen-free configuration suitable for modern manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Consult official Panjit documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying electrical parameters and package dimensions.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at a case temperature of 25°C?

The maximum continuous drain current is 11 A when the case temperature is maintained at 25°C.

Is this component suitable for medical instruments or aerospace machinery?

No, the product is not designed or authorized for equipment requiring high levels of reliability, including medical instruments, transportation equipment, or aerospace machinery.