PMPB08R5XNX

$0.64

Description：PMPB08R5XN/SOT1220-2/DFN2020M-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d8aab4961e3 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PMPB08R5XNX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PMPB08R5XN/SOT1220-2/DFN2020M-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMPB08R5XNX

Description：PMPB08R5XN/SOT1220-2/DFN2020M-
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：10mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1774 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta), 12.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2020M-6
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for PMPB08R5XNX

PMPB08R5XNX

Single FETs, MOSFETs Overview

The PMPB08R5XNX is a single N-channel enhancement mode MOSFET manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in a leadless DFN2020M-6 (SOT1220-2) surface-mount package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal management. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 19 A, and a maximum on-resistance of 8.5 mΩ at a gate-source voltage of 4.5 V. The gate threshold voltage ranges from 0.8 V to 2.2 V, with a total gate charge of 15 nC. Operating temperatures span from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low threshold voltage facilitates easy drive compatibility.
Very fast switching characteristics enabled by Trench MOSFET technology.
Small and leadless ultra-thin SMD plastic package design.

Single FETs, MOSFETs Applications

Battery management systems
High-speed line drivers
Low-side load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm exact packaging configuration and reel specifications. Confirm RoHS compliance status and longevity program availability directly through manufacturer channels before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling within a compact footprint. Ensure the driving circuit can support the specified gate threshold voltage range. Verify that the PCB layout adequately supports the exposed drain pad for optimal thermal dissipation during operation.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PMPB series of N-channel trench MOSFETs designed for general-purpose switching applications. The DFN2020M-6 package provides a balance between power handling capability and space efficiency, suitable for dense surface-mount assemblies.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and package dimensions against the original datasheet.