PMPB14R0EPX

$0.69

Description：MOSFET P-CH 30V 9A DFN2020M-6
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a5a360072cc1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PMPB14R0EPX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 30V 9A DFN2020M-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMPB14R0EPX

Description：MOSFET P-CH 30V 9A DFN2020M-6
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：227 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.9W (Ta), 12.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for PMPB14R0EPX

PMPB14R0EPX

Single FETs, MOSFETs Overview

The PMPB14R0EP is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in a leadless DFN2020M-6 (SOT1220-2) plastic package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of -30 V, a continuous drain current of -12 A at 25 °C, and a maximum on-state resistance of 16 mΩ at VGS = -10 V. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Logic-level compatible gate drive
Trench MOSFET technology for low on-resistance
Leadless ultra-thin SMD package with exposed thermal drain pad

Single FETs, MOSFETs Applications

Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Computing power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package version and marking codes. Confirm RoHS compliance status and check for any recent Product Change Notices regarding assembly sites or material updates before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact surface-mount solutions with efficient heat dissipation via the exposed pad. Ensure the design accommodates the logic-level compatibility and verify that the thermal resistance characteristics meet the system's power dissipation requirements under expected ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the PMPB series of P-channel Trench MOSFETs from Nexperia. These components are designed for medium power applications where small form factors and high thermal performance are critical. The DFN2020M-6 package provides a balance between current handling capability and board space efficiency.