PSMN016-100YS,115

$1.26

Description：MOSFET N-CH 100V 51A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1139e284272b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PSMN016-100YS,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 51A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN016-100YS,115

Description：MOSFET N-CH 100V 51A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：16.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2744 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：117W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN016-100YS,115

PSMN016-100YS,115

Single FETs, MOSFETs Overview

The Nexperia PSMN016-100YS,115 is an N-channel enhancement mode MOSFET housed in a surface-mount LFPAK (SOT669) package. It features a drain-source voltage rating of 100 V and a continuous drain current of 51 A at Tmb = 25 °C. The device exhibits a typical on-state resistance of 16.3 mΩ at VGS = 10 V and Tj = 25 °C. Total gate charge is typically 54 nC under dynamic conditions. The component supports a junction temperature range from -55 °C to 175 °C with a total power dissipation capacity of 117 W.

Single FETs, MOSFETs Feature Summary

Advanced TrenchMOS technology delivers low on-state resistance and reduced gate charge for improved switching efficiency.
LFPAK packaging provides high power density and enhanced thermal performance within a compact Power-SO8 footprint.
Qualified for operation up to 175 °C junction temperature, suitable for demanding industrial and communication environments.

Single FETs, MOSFETs Applications

DC-to-DC converters
Lithium-ion battery protection circuits
Load switching applications
Motor control systems
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix ,115 to ensure correct reel packaging configuration. Confirm that the design environment does not require automotive qualification, as this specific product variant is not qualified for automotive use. Cross-reference the SOT669 package outline dimensions during PCB layout to ensure mechanical compatibility with the intended footprint.

Single FETs, MOSFETs Selection Notes

Select this component when a standard level N-channel MOSFET is required for 100 V applications needing moderate current handling. The LFPAK package offers superior thermal dissipation compared to traditional plastic packages. Ensure the gate drive voltage supports the specified RDS(on) characteristics. Evaluate the thermal resistance parameters against the system's mounting base temperature constraints to maintain safe operating junction temperatures.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's standard level N-channel MOSFET portfolio utilizing TrenchMOS technology. It is designed for general-purpose power switching in industrial, communications, and domestic equipment. The LFPAK form factor addresses the need for higher power density in space-constrained designs while maintaining robust thermal characteristics for reliable long-term operation.