PSMN2R9-30MLC,115

Single FETs, MOSFETs Overview

The Nexperia PSMN2R9-30MLC,115 is a logic level enhancement mode N-channel MOSFET utilizing NextPower Superjunction technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 30 V and a continuous drain current of 70 A at Tmb = 25 °C. The device exhibits ultra-low gate charge characteristics, with QG(tot) typically 16.7 nC at VGS = 4.5 V and 36.1 nC at VGS = 10 V. On-state resistance is specified as 2.95 mΩ max at VGS = 10 V and 3.8 mΩ max at VGS = 4.5 V, both measured at ID = 25 A and Tj = 25 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for 4.5V gate drive applications using NextPower Superjunction technology to ensure high system efficiencies across varying load conditions.
• Engineered with low parasitic inductance and resistance within the LFPAK33 package to minimize switching losses.
• Delivers ultra-low total gate charge (QG), gate-drain charge (QGD), and output charge (QOSS) to support high-frequency operation.

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Load switching
• Synchronous buck regulator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring efficient logic-level control without complex gate drive circuitry. The device is suitable for applications demanding low conduction losses at moderate currents. Ensure the mounting base temperature remains within limits to maintain the rated 70 A continuous current capability, as thermal performance is critical for sustained operation.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower series, which employs superjunction technology to achieve superior performance compared to standard planar MOSFETs. The LFPAK33 package provides a robust surface-mount solution with a dedicated mounting base connected to the drain, facilitating effective heat dissipation for power management applications in industrial and communications equipment.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative devices meet the 30 V rating and offer comparable RDS(on) at the intended gate drive voltage. Ensure the replacement package matches the SOT1210 footprint if board space is constrained.