PSMN3R8-100BS,118

$2.94

Description：MOSFET N-CH 100V 120A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ccda4d8132a5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN3R8-100BS,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN3R8-100BS,118

Description：MOSFET N-CH 100V 120A D2PAK
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9900 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：306W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for PSMN3R8-100BS,118

PSMN3R8-100BS,118

Single FETs, MOSFETs Overview

The Nexperia PSMN3R8-100BS,118 is a standard level N-channel enhancement mode MOSFET housed in a D2PAK (SOT404) surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current capability of 120 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 3.9 mΩ at 25 °C and 6.9 mΩ at 100 °C junction temperature. Total gate charge is typically 170 nC. It supports a junction temperature range from -55 °C to +175 °C with a total power dissipation of 306 W.

Single FETs, MOSFETs Feature Summary

High efficiency operation achieved through minimized switching and conduction losses.
Compatible with standard level gate drive sources for simplified circuit design.
Qualified for high-temperature operation up to 175 °C junction temperature.

Single FETs, MOSFETs Applications

DC-to-DC converters
Load switching
Motor control
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements carefully as continuous current is limited by the package and mounting base temperature. Ensure gate drive voltages align with standard level specifications to fully utilize the low on-state resistance characteristics. Consider the 175 °C junction temperature rating for high-temperature industrial environments.

Single FETs, MOSFETs Part Context

This component belongs to Nexperia's portfolio of standard level N-channel MOSFETs designed for industrial, communications, and domestic equipment. The D2PAK package provides a robust solution for surface-mount applications requiring high current handling capabilities within a compact form factor suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Nexperia PSMN series devices sharing the 100 V rating and D2PAK package. Verify pinout compatibility and ensure that alternative parts meet or exceed the required 120 A current and 3.9 mΩ resistance specifications.

Single FETs, MOSFETs FAQ

Is the PSMN3R8-100BS automotive qualified?

No, this product is not automotive qualified unless explicitly stated in the data sheet. It is designed for industrial, communications, and domestic equipment.