PZTA42T1

Single Bipolar Transistors Overview

The PZTA42T1 is an NPN silicon high-voltage transistor manufactured by onsemi, housed in a SOT-223 surface-mount package. It features a collector-emitter voltage (VCEO) of 300 Vdc and a collector-base voltage (VCBO) of 300 Vdc. The device supports a maximum DC collector current (IC) of 500 mAdc and total power dissipation (PD) of 1.5 Watts at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 25 to 40 depending on operating conditions, a current-gain bandwidth product (fT) of 50 MHz, and a collector-emitter saturation voltage (VCE(sat)) of 0.5 Vdc at specified currents.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with 300 V collector-emitter and collector-base ratings for robust operation in demanding circuits.
• Surface-mount construction in a SOT-223 package designed for efficient thermal management and automated assembly processes.
• Capable of handling up to 500 mA continuous collector current with a low saturation voltage for effective switching performance.

Single Bipolar Transistors Applications

• Video output stages requiring high voltage handling
• Telephony equipment interfaces
• Professional communication systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T1' corresponds to the required reel packaging configuration when sourcing components. Confirm that the procurement documentation explicitly references the PZTA42T1 part number to ensure compatibility with the SOT-223 footprint and thermal specifications outlined in the official datasheet.

Single Bipolar Transistors Selection Notes

Select this component for designs necessitating high voltage isolation combined with moderate current capabilities in a compact surface-mount form factor. Evaluate the thermal resistance parameters against the intended PCB copper area to ensure the junction temperature remains within the 150°C limit during operation.

Single Bipolar Transistors Part Context

This device belongs to the PZTA42 series of NPN high-voltage transistors produced by onsemi. It serves as the surface-mount equivalent to through-hole variants like the MPSA42, offering similar electrical characteristics while facilitating automated placement on printed circuit boards.

Single Bipolar Transistors Replacement Considerations

PZTA42T1G is a verified substitute part number within the same manufacturer's portfolio, maintaining identical electrical specifications and package dimensions.

Single Bipolar Transistors FAQ

What is the thermal resistance from junction to ambient for the PZTA42T1?

The thermal resistance (RθJA) is 83.3 °C/W when mounted on a recommended glass epoxy printed circuit board footprint.

How does the DC current gain vary with collector current?

The minimum DC current gain (hFE) ranges from 25 at 1.0 mA to 40 at both 10 mA and 30 mA collector currents, measured at a VCE of 10 Vdc.