QS120SCM80D2P

$7.86

Description：1200V N-CHANNEL SIC MOSFET 80 M
Series：-
Mfr：Quest Semi
Package：Tube

SKU:36d43e5d87f2 Category: Single FETs, MOSFETs Brand: Quest Semi

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Product introduction

QS120SCM80D2P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Quest Semi. Its product description is 1200V N-CHANNEL SIC MOSFET 80 M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for QS120SCM80D2P

Description：1200V N-CHANNEL SIC MOSFET 80 M
Series：-
Mfr：Quest Semi
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：3.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1001 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK-7L
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for QS120SCM80D2P

QS120SCM80D2P

Single FETs, MOSFETs Overview

The QS120SCM80D2P is a 1200V N-Channel Silicon Carbide (SiC) MOSFET manufactured by Quest Semi. It features a TO-263-7L package and offers a typical drain-to-source breakdown voltage of 1200V with a maximum gate-to-source voltage range of -10V to +25V. The device provides a typical on-resistance of 80mΩ at 20V gate drive and supports a continuous drain current of 40A at 25°C case temperature, reducing to 29A at 100°C. Switching performance includes turn-on energy of 325µJ and turn-off energy of 219µJ under specified test conditions. The component operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Fast switching characteristics designed to minimize electromagnetic interference and radio frequency interference.
Low gate charge specification to reduce overall switching losses during operation.
Rated for short circuit withstand capability to enhance system reliability.
Low RDS(ON) temperature coefficient to improve efficiency across varying thermal conditions.

Single FETs, MOSFETs Applications

Asymmetrical bridge circuits
Power converters
Inverters
Single switch forward topologies
Flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific part number QS120SCM80D2P against official Queensland Semiconductor Technologies Ltd documentation to confirm electrical parameters and package dimensions. Ensure compatibility with TO-263-7L mounting requirements. Check for any updated datasheet revisions that may affect absolute maximum ratings or thermal characteristics before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low switching losses and robust thermal performance. Consider the 1200V rating and 40A continuous current capacity for power conversion systems. Evaluate the TO-263-7L package suitability for your PCB layout and thermal management strategy. Confirm that the gate drive voltage aligns with the recommended operating values of -5.0V to +20V for optimal performance.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to the high-performance power semiconductor category from Quest Semi. It utilizes silicon carbide technology to achieve superior switching speeds and thermal stability compared to traditional silicon devices. The TO-263-7L package facilitates surface mount assembly while providing adequate heat dissipation for moderate power levels in compact electronic designs.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult manufacturer guidelines for cross-referencing alternatives based on specific voltage, current, and package requirements.