R6008ANX

Single FETs, MOSFETs Overview

The R6008ANX is a 10V drive N-channel MOSFET designed for power supply applications. It features a 600V drain-source voltage and an 8.0A continuous drain current. The typical on-resistance at 10V gate drive is 0.6Ω, with a total gate charge of 21nC. Power dissipation is rated at 50W in a TO-220FM package. Storage temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode MOSFET structure
• Optimized for low gate drive voltage operation
• High breakdown voltage capability
• Lead-mounted package design

Single FETs, MOSFETs Applications

• Power Supply

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status before procurement. This component is not recommended for new designs and is produced solely to support existing customers. Confirm availability through authorized distributors or direct manufacturer channels, as standard commercial stocking may be limited. Ensure final acceptance aligns with legacy project requirements rather than new product development cycles.

Single FETs, MOSFETs Selection Notes

Select this part only for retrofitting or maintaining existing equipment where the original design specified this exact component. For new designs, consider the R6009KNX as a recommended replacement with identical pinout and package but improved electrical characteristics. Evaluate thermal management needs carefully given the 50W dissipation rating in the TO-220FM housing.

Single FETs, MOSFETs Part Context

This device belongs to ROHM's lineup of high-voltage N-channel MOSFETs optimized for 10V gate drive applications. It is housed in a TO-220FM leaded package suitable for through-hole mounting. The component is classified as obsolete for new designs, indicating it is being phased out in favor of newer generations like the R6009KNX series which offer enhanced performance metrics.

Single FETs, MOSFETs Replacement Considerations

The R6009KNX is the officially confirmed substitute. It shares the same pinout and TO-220FM package. Key differences include a higher drain current (9.0A vs 8.0A), lower on-resistance (0.5Ω vs 0.6Ω), and lower gate charge (16.5nC vs 21nC). Verify that the application circuit can accommodate these parameter changes.