R8008ANJGTL

$4.05

Description：NCH 800V 8A POWER MOSFET : R8008
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1b8fa6c55732 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

R8008ANJGTL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 800V 8A POWER MOSFET : R8008. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for R8008ANJGTL

Description：NCH 800V 8A POWER MOSFET : R8008
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.03Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：195W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263S
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for R8008ANJGTL

R8008ANJGTL

Single FETs, MOSFETs Overview

The R8008ANJGTL is a single N-channel enhancement mode silicon MOSFET manufactured by ROHM Semiconductor. It utilizes the LPTS (TO-263S) surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include an 800V drain-source breakdown voltage, an 8A continuous drain current, and a maximum power dissipation of 195W. The device features a typical on-resistance of 1.03 Ohms at Vgs=10V, a total gate charge of 38nC, and a gate-source voltage rating of ±30V.

Single FETs, MOSFETs Feature Summary

Low on-resistance for efficient power conduction
Fast switching speed capabilities
High gate-source voltage tolerance of ±30V
Lead-free plating compliant with RoHS directives

Single FETs, MOSFETs Applications

Power supply circuits
Automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific part number matches the required automotive grade specifications if applicable. Ensure proper handling procedures are followed due to the sensitivity of semiconductor devices to electrostatic discharge during storage and installation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust thermal performance and low conduction losses. Consider the TO-263S package for adequate heat dissipation in surface-mount designs. Evaluate the 8A current rating against peak load requirements to ensure reliable operation under varying thermal conditions.

Single FETs, MOSFETs Part Context

This component belongs to the R8008AN series of power MOSFETs designed for high-voltage switching applications. The series is characterized by its ability to handle significant power dissipation while maintaining low on-state resistance. It serves as a critical switching element in power conversion topologies where efficiency and reliability are paramount.