Single FETs, MOSFETs RD3P100SNTL1 product image

RD3P100SNTL1

$1.26
  • Description:MOSFET N-CH 100V 10A TO252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5a454c5e850c Category: Brand:

  
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RD3P100SNTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 100V 10A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RD3P100SNTL1

  • Description:MOSFET N-CH 100V 10A TO252
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:133mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for RD3P100SNTL1

RD3P100SNTL1

Single FETs, MOSFETs Overview

The RD3P100SNTL1 is an N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in a TO-252-3 (DPAK) surface-mount package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 10 A. Key electrical characteristics include a maximum on-resistance of 133 mOhms, a gate threshold voltage of 2.5 V, and a total gate charge of 18 nC. It operates within a temperature range of -55 C to +150 C with a power dissipation rating of 20 W.

Single FETs, MOSFETs Feature Summary

  • N-channel silicon construction for standard switching applications
  • Low on-resistance design to minimize conduction losses
  • Fast switching performance with low gate charge
  • Enhanced mode operation compatible with standard drive voltages

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power supply switching stages
  • Motor driver output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix TL1 to ensure correct packaging configuration. Confirm RoHS compliance status through official documentation before integration. Check for specific handling requirements related to electrostatic discharge during assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 10 A current capacity are required in a DPAK package. Consider the 133 mOhm on-resistance for thermal management calculations. Ensure the driving circuit can provide sufficient voltage to fully enhance the channel given the 2.5 V threshold specification.

Single FETs, MOSFETs Part Context

This part belongs to the RD3P series of N-channel MOSFETs from ROHM Semiconductor. The series focuses on providing optimized performance for general-purpose power switching applications. The TO-252-3 package offers a balance between current handling capability and board space efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before replacing the original component.

RD3P100SNTL1RD3P100SNTL1
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