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RFN10TF6S is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE STANDARD 600V 10A TO220NFM. Review the specifications below when checking this part for your BOM.
The RFN10TF6S is a silicon epitaxial planar super fast recovery diode designed for general rectification applications. It features a TO-220NFM (2PIN) leaded package with a maximum repetitive peak reverse voltage of 600V and an average rectified forward current rating of 10A at a case temperature of 82°C. The device supports a non-repetitive surge forward current of 100A and exhibits a maximum reverse recovery time of 30ns under specified test conditions. Operating junction temperatures range from -55°C to +150°C, ensuring reliable performance in high-temperature environments.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and configuration. Confirm that the component meets all required electrical parameters for your circuit design before procurement. Check for any product change notifications or lifecycle status updates directly from ROHM Semiconductor to avoid supply disruptions.
Select this component based on its 600V reverse voltage rating and 10A continuous current capability. Ensure the thermal management system can maintain the junction temperature within the specified limits during operation. Consider the low switching loss feature for efficiency requirements in rectification circuits.
This component belongs to the RFN series of super fast recovery diodes manufactured by ROHM Semiconductor. It utilizes a silicon epitaxial planar construction housed in a robust TO-220NFM package. The series is engineered for applications requiring efficient rectification with minimal switching losses.
RFN10BGE3S
The maximum non-repetitive surge forward current is 100A.
The typical reverse recovery time is 27.4ns.
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