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RFP3055LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 11A TO220-3. Review the specifications below when checking this part for your BOM.
The RFP3055LE is an N-channel enhancement-mode power MOSFET manufactured by onsemi. It features a maximum drain-to-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 11 A at 25°C case temperature. The device exhibits a typical drain-to-source on-resistance (R_DS(ON)) of 0.107 Ω at V_GS = 5 V and I_D = 8 A. It operates within a junction temperature range of -55°C to 175°C and utilizes the TO-220AB package.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the part number matches the specific TO-220AB package variant. Review the datasheet for absolute maximum ratings to ensure operational limits are not exceeded during design integration.
Select this component for applications requiring low on-resistance and logic-level compatibility. Ensure thermal management meets the specified junction-to-ambient resistance requirements. Verify that the gate drive voltage aligns with the threshold specifications for optimal conduction characteristics.
This device belongs to the RFD3055LE family, which includes variants in different packages such as TO-251AA and TO-252AA. All variants share identical electrical characteristics but differ in physical packaging and mounting configurations. The RFP3055LE specifically denotes the through-hole TO-220AB form factor.
Direct substitutes include RFD3055LE (TO-251AA) and RFD3055LESM (TO-252AA). These parts offer identical electrical performance but require appropriate PCB layout adjustments due to package differences.
The absolute maximum gate-to-source voltage is ±16 V.
Yes, it features fast switching times with typical turn-on and turn-off delays defined in the electrical specifications.
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