RFP40N10

Single FETs, MOSFETs Overview

The RFP40N10 is an N-Channel power MOSFET manufactured using the MegaFET process, designed for high-performance switching applications. It features a drain-to-source breakdown voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 40 A at case temperature of 25°C. The maximum on-resistance (R_DS(on)) is 0.040 Ω at V_GS = 10 V and I_D = 40 A. The device operates within a junction temperature range of -55°C to 175°C and offers a power dissipation rating of 160 W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes MegaFET process technology for optimized silicon utilization and performance.
• Capable of direct drive from integrated circuits without additional level shifting.
• Includes unclamped inductive switching (UIS) rating curve for robustness.

Single FETs, MOSFETs Applications

• Switching regulators
• Switching converters
• Motor drivers
• Relay drivers
• Emitter switches for bipolar transistors

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the TO-220AB package matches the required footprint. Check for RoHS compliance status if environmental regulations apply to the assembly. Ensure thermal management design accounts for the specified junction-to-ambient resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-Channel MOSFET with 40 A continuous current capability is required. The low on-resistance supports efficient power handling in switching topologies. Consider the TO-220AB package for through-hole mounting requirements. Evaluate thermal constraints based on the 160 W power dissipation limit at 25°C case temperature.

Single FETs, MOSFETs Part Context

This part belongs to the RF series of power MOSFETs produced by Fairchild Semiconductor, now part of onsemi. The RFP40N10 specifically denotes the TO-220AB package variant. Related parts include RFG40N10 (TO-247), RF1S40N10 (TO-262AA), and RF1S40N10SM (TO-263AB). All share identical electrical characteristics but differ in physical packaging.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes include RFG40N10 (TO-247), RF1S40N10 (TO-262AA), and RF1S40N10SM (TO-263AB). These variants maintain the same electrical specifications while offering different mechanical footprints for board layout flexibility.