RQ3E160ADTB1

Single FETs, MOSFETs Overview

The RQ3E160ADTB1 is a single N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an HSMT-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 16 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 3.5 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage (Vgs(th)) of 1 V. The total gate charge (Qg) is specified at 51 nC. Thermal performance includes a power dissipation rating of 2 W and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel configuration for low-side switching applications
• Low on-resistance design for efficient power management
• Enhanced thermal stability with high junction temperature capability

Single FETs, MOSFETs Applications

• General-purpose power switching circuits
• DC-DC converter output stages
• Motor control driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ADTB1' against official ROHM documentation to confirm pinout and marking details, as distributor listings may vary. Ensure the component meets RoHS and REACH compliance requirements for your target market. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current handling is required in a compact HSMT-8 footprint. The low Rds(on) value supports efficiency in battery-powered or space-constrained designs. Verify that the gate drive voltage aligns with the 1 V threshold specification for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the ROHM RQ series of automotive-grade and industrial MOSFETs designed for high reliability. The HSMT-8 package provides a small form factor suitable for dense PCB layouts. The series emphasizes low conduction losses and robust thermal performance for demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts within the same voltage and current class. Verify pin compatibility and thermal characteristics before replacing.