RQ3L270BKFRATCB

$1.37

Description：NCH 60V 27A, HSMT8AG, POWER MOSF
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3563687ee611 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

RQ3L270BKFRATCB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 60V 27A, HSMT8AG, POWER MOSF. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RQ3L270BKFRATCB

Description：NCH 60V 27A, HSMT8AG, POWER MOSF
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for RQ3L270BKFRATCB

RQ3L270BKFRATCB

Single FETs, MOSFETs Overview

The RQ3L270BKFRATCB is a single N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 60V drain-source voltage rating and supports a continuous drain current of 27A. The device exhibits a maximum on-state resistance of 14.6mΩ at VGS=10V. It utilizes the HSMT8AG surface-mount package, which provides a power dissipation capacity of 69W. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Complies with AEC-Q101 automotive qualification standards for reliability.
Utilizes an original terminal and plating treatment to ensure high mounting reliability.
HSMT8AG package design reduces required mounting area by up to 64%.

Single FETs, MOSFETs Applications

Advanced Driver Assistance Systems (ADAS)
Automotive Information Systems
Vehicle Lighting Circuits
Body Electronics

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required packaging format. Confirm the component meets AEC-Q101 requirements for your target application. Ensure storage conditions remain within specified limits to maintain solderability. Check for any specific handling precautions regarding electrostatic discharge during manufacturing processes.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint is required for high-current switching applications. The low on-resistance minimizes conduction losses in power paths. Verify that the gate drive voltage aligns with the specified threshold characteristics. Consider thermal management solutions based on the provided junction-to-case thermal resistance values.

Single FETs, MOSFETs Part Context

This part belongs to the RQ3L series of automotive-grade power MOSFETs designed for high-efficiency switching. The HSMT8AG package represents a specialized form factor intended to optimize board space utilization while maintaining robust thermal performance under demanding operating conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official ROHM documentation for verified substitute part numbers. Ensure any replacement maintains identical pinout configuration and package dimensions. Verify that alternative components meet the same AEC-Q101 qualification standards.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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