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RS1E281BNTB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 30V 28A/80A 8HSOP. Review the specifications below when checking this part for your BOM.
The RS1E281BNTB1 is an N-channel power MOSFET designed for high-efficiency switching applications. It features a Drain-Source Voltage (V_DSS) of 30V and a continuous Drain Current (I_D) of 80A. The device exhibits low on-resistance, with typical values of 0.0023 Ω at V_GS = 4.5V and 0.0017 Ω at V_GS = 10V. Total gate charge (Q_g) is specified at 50 nC. Power dissipation (P_D) reaches 30W in the HSOP8 package. The component supports surface mount mounting and operates within a storage temperature range of -55°C to 150°C.
Verify the specific ordering suffix TB1 corresponds to the taping packaging format containing 2500 units per reel. Confirm that the component meets RoHS compliance requirements for lead-free plating. Ensure the application environment does not involve automotive equipment, as this standard-grade product is explicitly not recommended for such use cases.
Select this component for applications requiring high current handling up to 80A with a 30V voltage rating. The low R_DS(on) characteristics make it suitable for minimizing conduction losses in power conversion stages. Consider the HSOP8 package size for space-constrained designs while ensuring adequate thermal management for the 30W power dissipation capability.
This part belongs to the RS1E series of N-channel power MOSFETs from Rohm Semiconductor. It is categorized as a standard-grade product intended for general industrial and consumer electronics rather than automotive-grade reliability. The HSOP8 package provides a compact footprint suitable for surface mount technology assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering alternative components from other manufacturers.
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