RSS070N05HZGTB

Single FETs, MOSFETs Overview

RSS070N05HZGTB is a single N-channel power MOSFET manufactured by ROHM Semiconductor. It features a SOP-8 surface-mount package and operates with a drain-source voltage of 45 V and a continuous drain current of 7 A. The device exhibits a maximum on-resistance of 25 mΩ at a gate-source voltage of 4 V. Key electrical parameters include a total gate charge of 12 nC, a forward transfer admittance of 6 S, and a power dissipation rating of 2 W. The component supports an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Low on-resistance optimized for switching efficiency
• Small surface mount SOP-8 package design
• Lead-free plating compliant with RoHS and halogen-free requirements

Single FETs, MOSFETs Applications

• Switching applications in power circuits
• Automotive electronic systems requiring AEC-Q101 compliance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB against official ROHM documentation to confirm packaging details such as embossed tape reel specifications. Ensure that the selected variant matches the required taping code and reel dimensions for automated assembly processes. Cross-reference the datasheet revision date to validate current manufacturing status and availability before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 45 V rated N-channel MOSFET with low conduction losses. The 4 V drive capability allows compatibility with standard logic-level drivers. Verify thermal management strategies to maintain junction temperatures within the specified limits during operation. Confirm that the SOP-8 footprint aligns with the target PCB layout constraints.

Single FETs, MOSFETs Part Context

The RSS070N05HZG series represents ROHM's lineup of automotive-grade N-channel power MOSFETs. This specific model utilizes silicon technology to deliver high performance in compact packages. The product line emphasizes robustness and efficiency for modern power management solutions.

Single FETs, MOSFETs Replacement Considerations

RSS070N05HZG serves as a direct replacement for RSS070N05FRA, maintaining identical pinout and package configurations.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for this MOSFET?

The maximum pulsed drain current is ±28 A under conditions of pulse width less than or equal to 10 μs and a duty cycle less than or equal to 1%.

Does the device support synchronous rectification?

Yes, the internal body diode characteristics, including a continuous forward current of 1.6 A, support its use in synchronous rectification topologies.